| PART |
Description |
Maker |
| GS72108A |
2Mb Async SRAMs
|
GSI Technology
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS840Z18AGT-166I GS840Z18AT GS840Z18AT-150 GS840Z1 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| CY7C128A-35PC CY7C128A-35VC CY7C128A-45SC CY7C128A |
2K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor
|
| GS840FH18AT-12 GS840FH18AGT-8.5I GS840FH32AGT-12I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| GS840E18AB-150 GS840E18AB-150I GS840E18AGT-150I GS |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33- |
128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns
|
CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1021 CY7C1021-10 CY7C1021-10VC CY7C1021-10ZC C |
Memory : Async SRAMs
64K x 16 Static RAM
JUMPER CROSS FOR TERMINAL BLOCK
MX Leveling Mechanism Kit, 1x2 / 1x2.25 / 1x 2.75 For use with PCB Mounted Keyswitches
MARKING TAG PRINTED 5MM 10PC
MX Leveling Mechanism Kit, 1x8 For use with PCB Mounted Keyswitches
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;（不推荐用于新设计）
|
Ecliptek, Corp.
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
